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Alfa Aesar™ Indium(III) phosphide, polycrystalline lump, 99.99% (metals basis)
Manufacturer: Alfa Aesar™ A1550906
Description
ApplicationsInP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Solubility
Insoluble in water.
Notes
Store in a cool, dry conditions in a well sealed container. Incompatible with oxidizing agent.
Specifications
| Indium(III) phosphide | |
| (metals basis) | |
| MFCD00016153 | |
| indium phosphide, indium phosphide, indium iii phosphide, indium monophosphide, unii-sd36lg60g1, ccris 8799, phosphinidyneindium, indium iii phosphide, dsstox_cid_11444, dsstox_rid_78875 | |
| P#[In] | |
| 145.792 | |
| 145.79 | |
| 99.99% | |
| 5g |
| 22398-80-7 | |
| InP | |
| 14,4953 | |
| GPXJNWSHGFTCBW-UHFFFAOYSA-N | |
| indiganylidynephosphane | |
| 31170 | |
| Polycrystalline Lump | |
| 1070°C |
Chemical Identifiers
| 22398-80-7 | |
| 145.792 | |
| GPXJNWSHGFTCBW-UHFFFAOYSA-N | |
| 31170 | |
| P#[In] |
| InP | |
| MFCD00016153 | |
| indium phosphide, indium phosphide, indium iii phosphide, indium monophosphide, unii-sd36lg60g1, ccris 8799, phosphinidyneindium, indium iii phosphide, dsstox_cid_11444, dsstox_rid_78875 | |
| indiganylidynephosphane |
Safety and Handling
GHS H Statement
H351
Suspected of causing cancer.
GHS P Statement
P281-P201-P202-P308+P313-P405-P501a
Use personal protective equipment as required.
Obtain special instructions before use.
Do not handle until all safety precautions have been read and understood.
IF exposed or concerned: Get medical advice/attention.
Store locked up.
Dispose of contents/container in accordance with local/regional/national/international regulations.
Warning
RTECSNumber : NL1800000
TSCA : TSCA